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ArticleJ-GLOBAL ID:200902131051506196整理番号:00A0845183

Highly Robust Ultrathin Silicon Nitride Films Grown at Low-Temperature by Microwave-Excitation High-Density Plasma for Giga Scale Integration.

ギガスケール集積回路に用いる,マイクロ波励起高密度プラズマを用いた高ロバスト性超薄シリコン窒化膜の低温成長

著者:SEKINE K(Tohoku Univ., Sendai, JPN)、SAITO Y(Tohoku Univ., Sendai, JPN)、HIRAYAMA M(Tohoku Univ., Sendai, JPN)・・・
資料名:IEEE Trans Electron Devices 巻:47 号:7 ページ:1370-1374
発行年:2000年07月
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