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ArticleJ-GLOBAL ID:200902131054522796整理番号:96A0278736

Photoemission oscillation measurement of barrier thickness for InAs/AlSb resonant tunneling diodes.

InAs/AlSb共鳴トンネルダイオードの障壁厚さの光電子放出振動測定

著者:ZINCK J J(Hughes Res. Lab., California)、CHOW D H(Hughes Res. Lab., California)、SCHULMAN J N(Hughes Res. Lab., California)・・・
資料名:Applied Physics Letters 巻:68 号:10 ページ:1406-1408
発行年:1996年03月04日
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