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ArticleJ-GLOBAL ID:200902165015656787整理番号:01A0998957

Design considerations for 25nm MOSFET devices.

25nm MOSFETデバイスの設計に関する考察

著者:SAHA S(Philips Semiconductors, CA, USA)
資料名:Solid-State Electron 巻:45 号:10 ページ:1851-1857
発行年:2001年10月
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