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ArticleJ-GLOBAL ID:200902165018703832整理番号:02A0219555

Size reduction of the Ge islands by utilizing the strain fields from the lower-temperature-grown hut-clusters buried in the Si matrix.

Si母体に埋め込まれた低温成長ヒュッテクラスタからの応力場を用いることによるGe島状構造のサイズ低減

著者:TAKAMIYA H(Musashi Inst. Technol., Tokyo, JPN)、MIURA M(Univ. Tokyo, Tokyo, JPN)、MITSUI J(Musashi Inst. Technol., Tokyo, JPN)・・・
資料名:Mater Sci Eng B 巻:B89 号:1/3 ページ:58-61
発行年:2002年02月14日
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