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ArticleJ-GLOBAL ID:200902165030099401整理番号:95A0137631

Structure analysis of the HF-treated Si(111): H surface with medium-energy ion scattering.

HF処理したSi(111):H表面の中程度エネルギーのイオン散乱による構造解析

著者:NISHIYAMA A(FOM‐Inst. Atomic and Molecular Physics, Amsterdam, NLD)、TER HORST G(FOM‐Inst. Atomic and Molecular Physics, Amsterdam, NLD)、LOHMEIER M(FOM‐Inst. Atomic and Molecular Physics, Amsterdam, NLD)・・・
資料名:Surf Sci 巻:321 号:3 ページ:261-266
発行年:1994年12月20日
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