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ArticleJ-GLOBAL ID:200902165031522278整理番号:98A0804313

Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates.

微斜面切断のa面サファイア基板上に成長させたGaN層の電気的および構造的性質の強化

著者:FATEMI M(U.S. Naval Res. Lab., Washington, D.C.)、WICKENDEN A E(U.S. Naval Res. Lab., Washington, D.C.)、KOLESKE D D(U.S. Naval Res. Lab., Washington, D.C.)・・・
資料名:Appl Phys Lett 巻:73 号:5 ページ:608-610
発行年:1998年08月03日
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