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ArticleJ-GLOBAL ID:200902165037962091整理番号:93A0933509

Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System.

超高真空プロセス装置内でのHClガスを用いたInAsのエッチングとGaAs上のInAs層の選択除去

著者:KADOYA Y(JRDC, Tokyo)、YOSHIDA T(JRDC, Tokyo)、SOMEYA T(Univ. Tokyo, Tokyo)・・・
資料名:Japanese Journal of Applied Physics. Part 2. Letters 巻:32 号:10B ページ:L1496-L1499
発行年:1993年10月15日
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