Structural defects in ion beam synthesised semiconducting FeSi<sub>2</sub>.

YANG Z; SHAO G; HOMEWOOD K P; FINNEY M S; HARRY M A; REESON K J

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J-GLOBAL ID：200902165045920993 Reference number：96A0335630

Structural defects in ion beam synthesised semiconducting FeSi₂.

イオンビーム合成した半導性FeSi₂の構造欠陥

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Author (6)： , , , , ,
Material：
Issue： 146 Page： 473-476 Publication year： 1995
JST Material Number： E0403B ISSN： 0305-2346 CODEN： IPHSAC Document type： Proceedings
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Lattice defects in semiconductors , Semiconductor thin films

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Structural defects in ion beam synthesised semiconducting FeSi2.

Structural defects in ion beam synthesised semiconducting FeSi₂.