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ArticleJ-GLOBAL ID:200902165067572751整理番号:94A0174376

The Effects of Process-Induced Defects on the Chemical Selectivity of Highly Doped Boron Etch Stops in Silicon.

シリコン中の高ドープほう素エッチストップの化学的選択性に対する工程で誘起された欠陥の影響

著者:DESMOND C A(Univ. California, California)、HUNT C E(Univ. California, California)、FARRENS S N(Univ. California, California)
資料名:J Electrochem Soc 巻:141 号:1 ページ:178-184
発行年:1994年01月
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