J-GLOBAL ID：200902165074835482整理番号：96A0176614
High Performance 0.3.MU.m CMOS using I-Line Lithography and BARC.
I‐線リソグラフィーとBARCを用いた高性能0.3μmCMOS
著者：THAKAR G V(Texas Instruments, TX, USA)、MADAN S K(Texas Instruments, TX, USA)、GARZA C M(Texas Instruments, TX, USA)・・・
資料名：Dig Tech Pap Symp VLSI Technol 巻：1995 ページ：75-76
発行年：1995年
資料名：Dig Tech Pap Symp VLSI Technol 巻：1995 ページ：75-76
発行年：1995年
J-GLOBAL ID: 200902165074835482
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