Group-VI impurity-related DX centers in In0.18Ga0.82As0.28P0.72.

KWON H K; CHOE B-D; KWON S D; LIM H

Art

J-GLOBAL ID：200902165075703431 Reference number：96A0932335

Group-VI impurity-related DX centers in In_0.18Ga_0.82As_0.28P_0.72.

In_0.18Ga_0.82As_0.28P_0.72中のVI族不純物関連DX中心

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=96A0932335&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=96A0932335&from=J-GLOBAL&jstjournalNo=C0266A") }}

Author (4)： , , ,
Material：
Volume： 80 Issue： 7 Page： 4211-4213 Publication year： Oct. 01, 1996
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

,...
,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=96A0932335&from=J-GLOBAL&jstjournalNo=C0266A") }}

Lattice defects in semiconductors

Return to Previous Page