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ArticleJ-GLOBAL ID:200902165078344289整理番号:02A0042385

High density a-Si:H films deposited in a modified PECVD triode system.

改良PECVDトライオードシステムにおいて蒸着された高密度a‐Si:H薄膜

著者:AGUAS H(Univ. Nova de Lisboa, Caparica, PRT)、MARTINS R(Univ. Nova de Lisboa, Caparica, PRT)、FERREIRA I(Univ. Nova de Lisboa, Caparica, PRT)・・・
資料名:Photovoltaic Sol Energy Conf 巻:16th 号:Vol.1 ページ:617-620
発行年:2000年
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