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J-GLOBAL ID：200902165092665934   Reference number：95A0765557

Heteroepitaxial Growth of InSb on Si by Plasma-Assisted Epitaxy.

プラズマ支援エピタクシーによるSi上でのInSbのヘテロエピタキシャル成長
Author (2)：
OHBA H

About OHBA H

(Tohoku Univ., Sendai)

About Tohoku Univ., Sendai

, 
HARIU T

About HARIU T

(Tohoku Univ., Sendai)

About Tohoku Univ., Sendai


Material：
13th Symposium on Alloy Semiconductor Physics and Electronics. Symposium Record  (文部省科学研究費補助金研究成果報告書)

About 13th Symposium on Alloy Semiconductor Physics and Electronics. Symposium Record


Page： 71-72  Publication year： 1994 
JST Material Number： N19951210  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
indium antimonide

About indium antimonide

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
プラズマ

About プラズマ

, 
支援

About 支援

, 
エピタクシー

About エピタクシー

, 
Si

About Si

, 
InSb

About InSb

, 
成長

About 成長


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