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ArticleJ-GLOBAL ID:200902165099248298整理番号:96A0420008

保護膜による高誘電体薄膜容量素子の耐圧改善

Improvement of dielectric breakdown property of a thin film capacitor.

著者:高橋武博(オリンパス光学工業)、三原孝士(オリンパス光学工業)、渡辺均(オリンパス光学工業)・・・
資料名:応用物理学関係連合講演会講演予稿集 巻:43rd 号:2 ページ:498
発行年:1996年03月
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About J-GLOBAL

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