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ArticleJ-GLOBAL ID:200902165101799361整理番号:01A0595577

Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes.

白金‐窒化ガリウムSchottkyダイオードの異常な容量特性の背後にある物理的機構

著者:MOHAMMAD S N(Howard Univ., Washington, D.C., USA)、FAN Z‐F(Univ. Illinois, Illinois, USA)、BOTCHKAREV A E(Howard Univ., Washington, D.C., USA)・・・
資料名:Philos Mag B 巻:81 号:5 ページ:453-460
発行年:2001年05月
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