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J-GLOBAL ID:200902165121705738   Reference number:03A0088323

Experimental Study on Carrier Transport Mechanism in Ultrathin-body SOI n- and p-MOSFETs with SOI Thickness less than 5 nm.

SOI厚5nm以下の極薄ボディーSOInおよびpMOSFETにおけるキャリア輸送メカニズムの実験検討
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Material:
Volume: 2002  Page: 47-50  Publication year: 2002 
JST Material Number: C0829B  ISSN: 0163-1918  Document type: Proceedings
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Category name(code) classified by JST.
Semiconductor integrated circuit  ,  Electric conduction in semiconductors and insulators in general 

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