Art
J-GLOBAL ID:200902165122252052   Reference number:99A0021297

A new threshold voltage model for deep-submicron MOSFETs with nonuniform substrate dopings.

不均一な基板ドーピングをもつディープサブミクロンMOSFETに関する新しいしきい値電圧モデル
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Material:
Volume: 38  Issue:Page: 1465-1469  Publication year: Sep. 1998 
JST Material Number: C0530A  ISSN: 0026-2714  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Transistors 
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