Ellipsometric Studies of Annealing of SiO<sub>2</sub> Layers during the Formation of Light-Emitting Si Nanocrystals in Them.

KHASANOV T; MARDEZHOV A S; YANOVSKAYA S G; KACHURIN G A; KAITASOV O

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J-GLOBAL ID：200902165122456421 Reference number：01A0736081

Ellipsometric Studies of Annealing of SiO₂ Layers during the Formation of Light-Emitting Si Nanocrystals in Them.

発光Siナノ結晶形成時におけるSiO₂層の焼なましの偏光解析

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Material：
Volume： 90 Issue： 6 Page： 831-834 Publication year： Jun. 2001
JST Material Number： H0143A ISSN： 0030-400X CODEN： OPSUA3 Document type： Article
Article type：原著論文 Country of issue： Russian Federation (RUS) Language： ENGLISH (EN)

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Polarimetry and polarimeters , Optical properties of condensed matter in general , Luminescence of semiconductors , Crystal growth of semiconductors

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Ellipsometric Studies of Annealing of SiO2 Layers during the Formation of Light-Emitting Si Nanocrystals in Them.

Ellipsometric Studies of Annealing of SiO₂ Layers during the Formation of Light-Emitting Si Nanocrystals in Them.