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ArticleJ-GLOBAL ID:200902165134441993整理番号:94A0276980

Orientation influence of cubic boron nitride crystal facets on the epitaxial growth of diamond film by microwave plasma chemical vapor deposition.

マイクロ波プラズマ化学蒸着によるダイヤモンド膜のエピタキシャル成長に対する立方晶窒化ほう素結晶のファセット方位の影響

著者:CHAI W P(Inst. Physics, Chinese Academy of Sciences, Beijing, CHN)、GU Y S(Inst. Physics, Chinese Academy of Sciences, Beijing, CHN)、LI M(Inst. Physics, Chinese Academy of Sciences, Beijing, CHN)・・・
資料名:J Cryst Growth 巻:135 号:3/4 ページ:639-642
発行年:1994年02月
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