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ArticleJ-GLOBAL ID:200902165136584406整理番号:94A0005127

Formation of high quality SiGe/Si heterostructures.

著者:SHIRAKI Y(Univ. Tokyo, Tokyo, JPN)、FUKATSU S(Univ. Tokyo, Tokyo, JPN)、FUJITA K(Univ. Tokyo, Tokyo, JPN)・・・
資料名:Diffus Defect Data Part B 巻:32/33 ページ:373-384
発行年:1993年
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About J-GLOBAL

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The system enables searches of similar kinds of content through linkage with external sites.
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