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ArticleJ-GLOBAL ID:200902165155603551整理番号:95A0970222

Elevated Temperature Annealing of the Neutron Induced Leakage Current and Corresponding Defect Levels in Low and High Resistivity Silicon Detectors.

著者:EREMIN V(A.F. Ioffe Physico‐Technical Inst., Acad. Sci. Russia, St. Petersburg, SUN)、IVANOV A(A.F. Ioffe Physico‐Technical Inst., Acad. Sci. Russia, St. Petersburg, SUN)、VERBITSKAYA E(A.F. Ioffe Physico‐Technical Inst., Acad. Sci. Russia, St. Petersburg, SUN)・・・
資料名:1994 IEEE Conf Rec Nucl Sci Symp Med Imag Conf Vol 1 ページ:206-209
発行年:1995年
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