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ArticleJ-GLOBAL ID:200902165166355525整理番号:01A0387258

A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors.

Cu(In,Ga)Se2黄銅鉱半導体の禁止帯幅傾斜による高効率太陽電池への新しいアプローチ

著者:DULLWEBER T(Univ. Stuttgart, Stuttgart, DEU)、HANNA G(Univ. Stuttgart, Stuttgart, DEU)、RAU U(Univ. Stuttgart, Stuttgart, DEU)・・・
資料名:Sol Energy Mater Sol Cells 巻:67 号:1/4 ページ:145-150
発行年:2001年03月
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