A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se<sub>2</sub> chalcopyrite semiconductors.

DULLWEBER T; HANNA G; RAU U; SCHOCK H W

Art

J-GLOBAL ID：200902165166355525 Reference number：01A0387258

A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se₂ chalcopyrite semiconductors.

Cu(In,Ga)Se₂黄銅鉱半導体の禁止帯幅傾斜による高効率太陽電池への新しいアプローチ

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=01A0387258&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0387258&from=J-GLOBAL&jstjournalNo=D0513C") }}

Author (4)： , , ,
Material：
Volume： 67 Issue： 1/4 Page： 145-150 Publication year： Mar. 2001
JST Material Number： D0513C ISSN： 0927-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0387258&from=J-GLOBAL&jstjournalNo=D0513C") }}

Semiconductor thin films , Solar cell

, , , , ,

Return to Previous Page

A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors.

A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se₂ chalcopyrite semiconductors.