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ArticleJ-GLOBAL ID:200902165172906916整理番号:99A0012064

Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal-oxide-semiconductor field-effect transistors.

サブミクロンnチャネル金属‐酸化物‐半導体電界効果トランジスタにおけるランダムな電信符号捕獲運動学に及ぼす自由電子分布の影響

著者:LUKYANCHIKOVA N B(Inst. Semiconductor Physics, Kiev, UKR)、PETRICHUK M V(Inst. Semiconductor Physics, Kiev, UKR)、GARBAR N P(Inst. Semiconductor Physics, Kiev, UKR)・・・
資料名:Appl Phys Lett 巻:73 号:17 ページ:2444-2446
発行年:1998年10月26日
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