Art
J-GLOBAL ID：200902165176978474
Reference number：97A0612737
Defects introduced in the electron irradiation of GaAs: Identification with the positron lifetime spectroscopy.
GaAsの電子照射誘起欠陥 陽電子寿命分光法による同定
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Author (3)：
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Material：
Volume：
388
Issue：
3
Page：
434-439
Publication year：
Apr. 01, 1997
JST Material Number：
D0208B
ISSN：
0168-9002
Document type：
Article
Article type：
原著論文
Country of issue：
Netherlands (NLD)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors
Terms in the title (7)：
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