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ArticleJ-GLOBAL ID:200902165181023164整理番号:99A0948451

Equilibrium Critical Thickness of Strained Buried SiGe layers.

歪み埋め込み型SiGe層の平衡臨界厚さ

著者:FISCHER A(Inst. Semiconductor Physics(IHP), Frankfurt(Oder), DEU)、KISSINGER G(Inst. Semiconductor Physics(IHP), Frankfurt(Oder), DEU)、RICHTER H(Inst. Semiconductor Physics(IHP), Frankfurt(Oder), DEU)・・・
資料名:Diffus Defect Data Part B 巻:69/70 ページ:149-153
発行年:1999年
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