Characteristics of dual-gate CMOS device using in-situ boron doped polysilicon gate. (II).

MOON J; OH S J; LEE J H; KIM B H; JOO S H; SHIM T E; LEE M Y

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J-GLOBAL ID：200902165189705469 Reference number：95A1009035

Characteristics of dual-gate CMOS device using in-situ boron doped polysilicon gate. (II).

In-situ Boron Doped-Siで製作したDual Gate CMOS特性の評価 (II)

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Volume： 56th Issue： 2 Page： 631 Publication year： Aug. 1995
JST Material Number： Y0055A Document type： Proceedings
Country of issue： Japan (JPN) Language： JAPANESE (JA)

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