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ArticleJ-GLOBAL ID:200902165195127116整理番号:94A0893871

単原子層成長におけるGaAs表面からのAs脱離とAsH3残留の影響

Effect of residual AsH3 gas on desorption of As atoms from GaAs surface during atomic layer epitaxy.

著者:坂本朗(富士ゼロックス)、大竹茂行(富士ゼロックス)、山本将央(富士ゼロックス)・・・
資料名:応用物理学会学術講演会講演予稿集 巻:55th 号:1 ページ:237
発行年:1994年09月
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