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ArticleJ-GLOBAL ID:200902165197021323整理番号:94A0179772

トレンチ分離における埋め込み酸化膜形状最適化による逆狭チャネル効果の低減

Supression of Inverse Narrow Channel Effect in Trench Isolated MOSFETs by the Optimization of Buried Oxide Form.

著者:芝原健太郎(日本電気)、巌庄一(日本電気)、浜田昌幸(日本電気)・・・
資料名:応用物理学会学術講演会講演予稿集 巻:54th 号:2 ページ:684
発行年:1993年09月
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