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ArticleJ-GLOBAL ID:200902165205393456整理番号:99A1028786

Low-frequency noise in n-GaN with high electron mobility.

高電子移動度を持つn‐GaNにおける低周波雑音

著者:LEVINSHTEIN M E(Ioffe Physicotechnical Inst., Russian Acad. Sci., St. Petersburg, RUS)、RUMYANTSEV S L(Ioffe Physicotechnical Inst., Russian Acad. Sci., St. Petersburg, RUS)、LOOK D C(Wright State Univ., Ohio)・・・
資料名:J Appl Phys 巻:86 号:9 ページ:5075-5078
発行年:1999年11月01日
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