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ArticleJ-GLOBAL ID:200902165217315124整理番号:98A0506709

浅溝素子分離とCVD‐SiO2ポリSi層間膜を用いた0.24μm2フラッシュメモリセル

A 0.24-.MU.m2 Cell Process with Shallow Groove Isolation and CVD-SiO2 Interpoly Dielectric Films.

著者:松崎望(日立 中研)、小林孝(日立 中研)、佐藤聡彦(日立 中研)・・・
資料名:応用物理学関係連合講演会講演予稿集 巻:45th 号:2 ページ:889
発行年:1998年03月
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