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ArticleJ-GLOBAL ID:200902212376297038整理番号:07A0743343

Non-Classical Hot-Electron Gate Current in the Deep Submicrometer N-MOS Flash Memory Cell

ディープサブミクロンN‐MOSフラッシュメモリセルの非古典的ホットエレクトロンゲート電流

著者:ZHANG Y.(Nanyang Technological Univ., Singapore)、ANG D.S.(Nanyang Technological Univ., Singapore)、KUAN H.P.(Systems‐on‐Silicon Manufacturing Co., Singapore)・・・
資料名:Proc Int Symp Phys Fail Anal Integr Circuits 巻:13th ページ:74-78
発行年:2006年
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About J-GLOBAL

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