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ArticleJ-GLOBAL ID:200902212383006235整理番号:08A0218373

Deep-level transient spectroscopy study of the E center in n-Si and partially relaxed n-Si0.9Ge0.1 alloy layers

n‐Si層と部分的に緩和したn‐Si0.9Ge0.1合金層におけるE中心の深準位過渡分光研究

著者:MAMOR M.(Sultan Qaboos Univ., Muscat, OMN)、ELZAIN M.(Sultan Qaboos Univ., Muscat, OMN)、BOUZIANE K.(Sultan Qaboos Univ., Muscat, OMN)・・・
資料名:Phys Rev B Condens Matter Mater Phys 巻:77 号:3 ページ:035213.1-035213.7
発行年:2008年01月
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