About J-GLOBAL

日本語

Font size
  • A
  • A

Articleの詳細情報

ArticleJ-GLOBAL ID:200902212389485356整理番号:08A0830312

A Gate-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2

HiSIM2に組込んだ最新のMOSFET技術用ゲート電流モデル

著者:INAGAKI Ryosuke(Waseda Univ., Fukuoka)、INAGAKI Ryosuke(Semiconductor Technol. Academic Res. Center, Kanagawa, JPN)、SADACHIKA Norio(Hiroshima Univ., Hiroshima, JPN)・・・
資料名:IEEJ Trans Electr Electron Eng 巻:3 号:1 ページ:64-71
発行年:2008年01月
  • J-GLOBAL home
  • Bookmark J-GLOBAL

J-GLOBAL: Linking, Expanding and Sparking

About J-GLOBAL

Linking

J-GLOBAL links information that represents the key to research and development. For example, linking articles and patents with people (authors and inventors) enables the extraction of a sequence of information.
It’s useful for making new discoveries and uncovering new information.

Expanding

The system enables searches of similar kinds of content through linkage with external sites.
It helps you to obtain knowledge from dissimilar fields and discover concepts that cross the boundaries of specialisms.

Sparking

Through repeated linkage and expansioniteration, J-GLOBAL provides unexpected hints for problem-solving and the illumination of new ideas.