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ArticleJ-GLOBAL ID:200902212390614720整理番号:05A0494591

Dislocation-Free InxGa1-xP1-yNy/GaP1-zNz Double-Heterostructure Light Emitting Diode on Si Substrate

Si基板上の転移のないInxGa1‐xP1‐yNy/GaP1‐zNzの二重ヘテロ構造の光放射ダイオード

著者:MOON Soo Young(Toyohashi Univ. Technol., Aichi, JPN)、YONEZU Hiroo(Toyohashi Univ. Technol., Aichi, JPN)、FURUKAWA Yuzo(Toyohashi Univ. Technol., Aichi, JPN)・・・
資料名:Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers 巻:44 号:4A ページ:1752-1755
発行年:2005年04月15日
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