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ArticleJ-GLOBAL ID:200902212392681603整理番号:08A1198213

Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors

ゲルマニウムソースストレッサーとドレインストレッサーを持つ歪シリコンナノワイヤトランジスタ

著者:LIOW Tsung‐Yang(National Univ. Singapore, Singapore)、LIOW Tsung‐Yang(Agency for Sci., Technol. and Res.(A*STAR), Singapore)、TAN Kian‐Ming(National Univ. Singapore, Singapore)・・・
資料名:IEEE Trans Electron Devices 巻:55 号:11 ページ:3048-3055
発行年:2008年11月
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