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ArticleJ-GLOBAL ID:200902212392707637整理番号:03A0255041

Characterization of defect type and dislocation density in double oxide heteroepitaxial CeO2/YSZ/Si(001) films

二重酸化物ヘテロエピタキシャルCeO2/YSZ/Si(001)膜における欠陥のタイプと転位密度の評価

著者:CHEN C H(Tokyo Inst. Technol., Tokyo, JPN)、KIGUCHI T(Tokyo Inst. Technol., Tokyo, JPN)、SAIKI A(Tokyo Inst. Technol., Tokyo, JPN)・・・
資料名:Appl Phys A 巻:76 号:6 ページ:969-973
発行年:2003年04月
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