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ArticleJ-GLOBAL ID:200902212400458986整理番号:09A0904287

Spatially resolved x-ray diffraction study of GaSb layers grown laterally on SiO2-masked GaAs substrates

SiO2でマスクしたGaAs基板上横方向に成長したGaSb層の空間分解X線回折研究

著者:WIERZBICKA A.(Inst. of Physics, Polish Acad. of Sciences, Al. Lotnikow 32/46, 02-228 Warsaw, POL)、DOMAGALA J. Z.(Inst. of Physics, Polish Acad. of Sciences, Al. Lotnikow 32/46, 02-228 Warsaw, POL)、ZYTKIEWICZ Z. R.(Inst. of Physics, Polish Acad. of Sciences, Al. Lotnikow 32/46, 02-228 Warsaw, POL)
資料名:J Appl Phys 巻:106 号:4 ページ:043521
発行年:2009年08月15日
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