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ArticleJ-GLOBAL ID:200902212400981646整理番号:07A0010466

Development of a piezoelectric lead titanate thin film process on silicon substrates by high rate gas flow sputtering

高速ガス流スパッタリングによるシリコン基板上圧電性チタン酸鉛薄膜プロセスの開発

著者:JACOBSEN H.(Fraunhofer Inst. for Silicon Technol. ISIT, Itzehoe, DEU)、JUNG Th.(Fraunhofer Inst. for Surface Engineering and Thin Films IST, Braunschweig, DEU)、ORTNER K.(Fraunhofer Inst. for Surface Engineering and Thin Films IST, Braunschweig, DEU)・・・
資料名:Sens Actuators A 巻:133 号:1 ページ:250-258
発行年:2007年01月08日
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