Art
J-GLOBAL ID：200902212405400447   Reference number：04A0661314

Computational study of variations in gap size for the electrostatic levitating force of MEMS device using dual BEM

MEMSデバイスの静電浮上力に対するギャップ変化の二重BEMを用いた計算による研究
Author (3)：
CHYUAN S-W

About CHYUAN S-W

(National Taiwan Univ., Taipei, TWN)

About National Taiwan Univ., Taipei, TWN

, 
LIAO Y-S

About LIAO Y-S

(National Taiwan Univ., Taipei, TWN)

About National Taiwan Univ., Taipei, TWN

, 
CHEN J-T

About CHEN J-T

(National Taiwan Ocean Univ., Keelung, TWN)

About National Taiwan Ocean Univ., Keelung, TWN


Material：
Microelectronics Journal  (Microelectron J)

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Volume： 35  Issue： 9  Page： 739-748  Publication year： Sep. 2004 
JST Material Number： A0186A  ISSN： 0026-2692  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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*micromachine

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,...
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JST classification (1)：
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Manufacturing technology of solid-state devices 
(NC03030V)

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Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
MEMSデバイス

About MEMSデバイス

, 
浮上力

About 浮上力

, 
ギャップ

About ギャップ

, 
BEM

About BEM

, 
計算

About 計算

, 
研究

About 研究


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