90-nm-node multi-level AG-AND type flash memory with cell size of true 2F<sup>2</sup>/bit and programming throughput of 10MB/s

SASAGO Y; KURATA H; ARIGANE T; OTSUGA K; KOBAYASHI T; IKEDA Y; FUKUMURA T; NARUMI S; SATO A

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J-GLOBAL ID：200902212406199192 Reference number：04A0094336

90-nm-node multi-level AG-AND type flash memory with cell size of true 2F²/bit and programming throughput of 10MB/s

真正2F²/ビットセルサイズ,10MB/sプログラミングスループットの90nmノードマルチレベルAG-ANDタイプフラッシュメモリ

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Author (9)： , , , , , , , ,
Material：
Volume： 2003 Page： 823-826 Publication year： 2003
JST Material Number： C0829B ISSN： 0163-1918 Document type： Proceedings
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor integrated circuit , Memory units

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90-nm-node multi-level AG-AND type flash memory with cell size of true 2F2/bit and programming throughput of 10MB/s

90-nm-node multi-level AG-AND type flash memory with cell size of true 2F²/bit and programming throughput of 10MB/s