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ArticleJ-GLOBAL ID:200902212407993194整理番号:05A0579509

Heterovalent interlayers and interface states: An ab initio study of GaAs/Si/GaAs (110) and (100) heterostructures

ヘテロ原子価の層間状態と界面状態 GaAs/Si/GaAs(110)および(100)ヘテロ構造のab initio研究

著者:DI VENTRA M.(Univ. California, California, USA)、BERTHOD C.(Univ. Geneve, Geneve, CHE)、BINGGELI N.(INFM, Trieste, ITA)
資料名:Physical Review. B. Condensed Matter and Materials Physics 巻:71 号:15 ページ:155324.1-155324.15
発行年:2005年04月
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