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J-GLOBAL ID：200902212411277320   Reference number：08A0020698

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

閃亜鉛鉱型およびウルツ鉱型InPナノ細線による光ルミネセンスの偏光と温度依存性

Author (11)： MISHRA A. (Dep. of Physics, Univ. of Cincinnati, Cincinnati, Ohio 45221-0011, USA) ,  TITOVA L. V. (Dep. of Physics, Univ. of Cincinnati, Cincinnati, Ohio 45221-0011, USA) ,  HOANG T. B. (Dep. of Physics, Univ. of Cincinnati, Cincinnati, Ohio 45221-0011, USA) ,  JACKSON H. E. (Dep. of Physics, Univ. of Cincinnati, Cincinnati, Ohio 45221-0011, USA) ,  SMITH L. M. (Dep. of Physics, Univ. of Cincinnati, Cincinnati, Ohio 45221-0011, USA) ,  YARRISON-RICE J. M. (Dep. of Physics, Miami Univ., Oxford, Ohio 45056, USA) ,  KIM Y. (Dep. of Physics, Coll. of Natural Sci., Dong-A Univ., Hadan 840, Sahagu, Busan 604-714, KOR) ,  JOYCE H. J. (Dep. of Electronic Materials Engineering, Res. School of Physical Sciences and Engineering, Australian National ...) ,  GAO Q. (Dep. of Electronic Materials Engineering, Res. School of Physical Sciences and Engineering, Australian National ...) ,  TAN H. H. (Dep. of Electronic Materials Engineering, Res. School of Physical Sciences and Engineering, Australian National ...) ,  JAGADISH C. (Dep. of Electronic Materials Engineering, Res. School of Physical Sciences and Engineering, Australian National ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 91  Issue： 26  Page： 263104-263104-3  Publication year： Dec. 24, 2007 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *indium phosphide ,...
Semi thesaurus term： forbidden band ,...

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JST classification (1)： Luminescence of semiconductors  (BM08092S)

Terms in the title (7)： 閃亜鉛鉱 ,  ウルツ鉱 ,  InP ,  ナノ細線 ,  光ルミネセンス ,  偏光 ,  温度依存性