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ArticleJ-GLOBAL ID:200902212427466450整理番号:04A0418772

Evaluation of diffusion barrier and electrical properties of tantalum oxynitride thin films for silver metallization

銀メタライゼーションのための酸窒化タンタル薄膜の拡散障壁及び電気的性質の評価

著者:MISRA E(Arizona State Univ., AZ, USA)、WANG Y(Arizona State Univ., AZ, USA)、THEODORE N D(Arizona State Univ., AZ, USA)・・・
資料名:Thin Solid Films 巻:457 号:2 ページ:338-345
発行年:2004年06月15日
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About J-GLOBAL

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