Art

J-GLOBAL ID：200902212450078084   Reference number：08A0703060

Effect of excess Sb on GeTe-Sb₂Te₃-Bi₂Te₃ recording films

GeTe-Sb₂Te₃-Bi₂Te₃記録膜に対する過剰Sbの影響

Author (4)： KUSADA Hideo (Matsushita Electric Industrial Co.,Ltd., Osaka, JPN) ,  HOSAKA Tomiharu (Matsushita Electric Industrial Co.,Ltd., Osaka, JPN) ,  KOJIMA Rei (Matsushita Electric Industrial Co.,Ltd., Osaka, JPN) ,  YAMADA Noboru (Matsushita Electric Industrial Co.,Ltd., Osaka, JPN)
Material： Proceedings of the Symposium on Phase Change Optical Information Storage  (相変化記録研究会シンポジウム講演予稿集)
Volume： 18th  Page： 32-37  Publication year： 2006 
JST Material Number： L1450A  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *optical disk ,  optical recording ,  *recording material ,  semiconductor thin film ,  compound semiconductor ,  telluride(chalcogenide) ,  antimony compound ,  bismuth compound ,  antimony ,  overwrite ,  jitter ,  crystal structure ,  chemical composition ,  concentration dependence ,  crystallization ,  amorphous state ,  temperature dependence ,  optical constant
Semi thesaurus term： GeTe ,  *phase change optical disk

JST classification (3)： Electronic recording,magnetic recording,optical recording  (NC06020F) ,  Semiconductor thin films  (BK14040E) ,  Solic-state devices in general  (NC03010Z)

Terms in the title (2)： GeTe ,  Sb