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ArticleJ-GLOBAL ID:200902212467187642整理番号:04A0477541

A low switching voltage organic-on-inorganic heterojunction memory element utilizing a conductive polymer fuse on a doped silicon substrate

ドープしたシリコン基板上の伝導性高分子ヒューズを用いた低スイッチング電圧有機‐オン‐無機ヘテロ接合記憶素子

著者:SMITH S(Princeton Univ., New Jersey)、FORREST S R(Princeton Univ., New Jersey)
資料名:Appl Phys Lett 巻:84 号:24 ページ:5019-5021
発行年:2004年06月14日
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About J-GLOBAL

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