Art
J-GLOBAL ID：200902212467187642   Reference number：04A0477541

A low switching voltage organic-on-inorganic heterojunction memory element utilizing a conductive polymer fuse on a doped silicon substrate

ドープしたシリコン基板上の伝導性高分子ヒューズを用いた低スイッチング電圧有機-オン-無機ヘテロ接合記憶素子
Author (2)：
SMITH S

About SMITH S

(Princeton Univ., New Jersey)

About Princeton Univ., New Jersey

, 
FORREST S R

About FORREST S R

(Princeton Univ., New Jersey)

About Princeton Univ., New Jersey


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 84  Issue： 24  Page： 5019-5021  Publication year： Jun. 14, 2004 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*silicon

About silicon

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
PEDOT

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,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor integrated circuit 
(NC03162T)

About Semiconductor integrated circuit

Terms in the title (7)：
Terms in the title
Keywords automatically extracted from the title.
ドープ

About ドープ

, 
シリコン基板

About シリコン基板

, 
高分子

About 高分子

, 
ヒューズ

About ヒューズ

, 
スイッチング

About スイッチング

, 
ヘテロ接合

About ヘテロ接合

, 
記憶素子

About 記憶素子


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