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ArticleJ-GLOBAL ID:200902212468258896整理番号:06A0475306

Drain current overshoot transient in polycrystalline silicon transistors: The effect of hole generation mechanism

ポリシリコントランジスタにおけるドレイン電流の過渡オーバシュート 正孔生成機構の効果

著者:EXARCHOS M.(Solid State Section, Physics Dep., Univ. of Athens, Panepistimioupolis Zografos, 15784, GRC)、PAPAIOANNOU G. J.(Solid State Section, Physics Dep., Univ. of Athens, Panepistimioupolis Zografos, 15784, GRC)、KOUVATSOS D. N.(Inst. of Microelectronics, NCSR “Demokritos,” 15310 Aghia Parakevi, GRC)・・・
資料名:J Appl Phys 巻:99 号:2 ページ:024511-024511-7
発行年:2006年01月15日
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