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ArticleJ-GLOBAL ID:200902212479598303整理番号:09A0057602

Dependence of Program Efficiency on Channel Conditions Regarding NOR-Type Flash Memory Devices Fabricated on a Silicon-on-Insulator (SOI) Substrate

SOI基板上に作製したNOR型フラッシュメモリ素子に関するチャンネル条件へのプログラム効率の依存性

著者:CHO Seongjae(Seoul National Univ., Seoul)、PARK Il Han(Seoul National Univ., Seoul)、LEE Jung Hoon(Seoul National Univ., Seoul)・・・
資料名:J Korean Phys Soc 巻:53 号:6 ページ:3422-3426
発行年:2008年12月15日
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About J-GLOBAL

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