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ArticleJ-GLOBAL ID:200902212479975123整理番号:05A1007139

Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface

結晶性シリコン表面の不動態化品質に及ぼす非晶質炭化けい素層厚の効果

著者:FERRE R.(Departament d’Enginyeria Electronica, Univ. Politecnica de Catalunya, Gran Capita s/n, Modul C4, 08034 Barcelona, ESP)、MARTIN I.(Departament d’Enginyeria Electronica, Univ. Politecnica de Catalunya, Gran Capita s/n, Modul C4, 08034 Barcelona, ESP)、VETTER M.(Departament d’Enginyeria Electronica, Univ. Politecnica de Catalunya, Gran Capita s/n, Modul C4, 08034 Barcelona, ESP)・・・
資料名:Appl Phys Lett 巻:87 号:20 ページ:202109-202109-3
発行年:2005年11月14日
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