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ArticleJ-GLOBAL ID:200902212501271950整理番号:06A0463260

Low voltage pentacene thin film transistors employing a self-grown metal-oxide as a gate dielectric

ゲート誘電体として自己成長金属酸化物を使用した低電圧ペンタセン薄膜トランジスタ

著者:KIM Kang Dae(Dep. of Electronics Engineering, Dong-A Univ., 840 Hadan-dong, Saha-gu, Busan 604-714, KOR)、SONG Chung Kun(Dep. of Electronics Engineering, Dong-A Univ., 840 Hadan-dong, Saha-gu, Busan 604-714, KOR)
資料名:Applied Physics Letters 巻:88 号:23 ページ:233508-233508-3
発行年:2006年06月05日
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