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ArticleJ-GLOBAL ID:200902212504669695整理番号:03A0487668

Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

AlN中間層を用いたAlGaN/GaN高電子移動度トランジスタの改良

著者:JIMENEZ A(Univ. Politecnica de Madrid, Madrid, ESP)、BOUGRIOUA Z(CRHEA, CNRS, Valbonne, FRA)、TIRADO J M(Univ. Politecnica de Madrid, Madrid, ESP)・・・
資料名:Appl Phys Lett 巻:82 号:26 ページ:4827-4829
発行年:2003年06月30日
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